教学科研成果
发明专利:
(1)周健,宁兴洋,孙志梅,一种MXene基复合材料及其制备方法和应用,授权公告日:2022.09.30,专利号:ZL 202111280832.X
(2)周健;李强;孙志梅,一种电池材料及其制备方法,授权公告日:2021.11.09,专利号:ZL 202010598371.X
(3)周健,刘宾,孙志梅,一种钇掺杂碲化锑相变材料的制备方法,授权公告日:2019.01.01, 专利号:ZL 201810066767.2
(4)周健,刘宾,孙志梅,于亚东,李开旗,一种钪掺杂碲化锑相变材料的水热制备方法,授权公告日:2019.03.12, 专利号:ZL 201810392777.5
(5)周健,孙志梅,王晓青,一种高钠掺杂碲化铅的制备方法,授权公告日:2019.03.29, 专利号:ZL 201711468614.2
(6)孙志梅,丁宗财,周健,一种GeTe微晶的制备方法,授权公告日:2015.02.04,专利号:ZL 201310487911.7
(7)孙志梅,潘元春,周健,萨百晟,一种Ge-Sb-Te三元相变材料薄膜的制备方法,授权公告日:2015.05.13,专利号:ZL 201210058804.8
(8)孙志梅,曾舒,苏忠亮,周健, 一种Cr2AlC颗粒增强Zn基复合材料及其制备方法, 授权公告日:2015.04.22,专利号:ZL 201310488066.5
代表性论文:
[1] Yu Gan, Naihua Miao*, Penghua Lan, Jian Zhou, Stephen R. Elliott, Zhimei Sun*, Robust Design of High-Performance Optoelectronic Chalcogenide Crystals from High-Throughput Computation, J. Am. Chem. Soc., 2022, 144: 5878−5886
[2] Yongda Huang, Jian Zhou, Guanjie Wang, Zhimei Sun*, Abnormally strong electron-phonon scattering induced unprecedented reduction in lattice thermal conductivity of two-dimensional Nb2C, J. Am. Chem. Soc. 2019, 141:8503−8508
[3] Naihua Miao, Bin Xu, Linggang Zhu, Jian Zhou, Zhimei Sun*, 2D Intrinsic Ferromagnets from van der Waals Antiferromagnets, J. Am. Chem. Soc. 2018, 140: 2417−2420
[4] Naihua Miao, Bin Xu, Nicholas C. Bristowe, Jian Zhou, Zhimei Sun*, Tunable Magnetism and Extraordinary Sunlight Absorbance in Indium Triphosphide Monolayer, J. Am. Chem. Soc. 2017, 139: 11125−11131
[5] Zhimei Sun*, Jian Zhou, Ho-Kwang Mao*, Rajeev Ahuja, Peierls distortion mediated reversible phase transition in GeTe under pressure, Proceedings of the National Academy of Sciences of the United States of America, 2012,109(16):5948-5952
[6] Baisheng Sa, Jian Zhou, Zhimei Sun*, Junji Tominaga, Rajeev Ahuja, Topological Insulating in GeTe/Sb2Te3 Phase-Change Superlattice, Phys. Rev. Lett., 2012,109(9):096802
[7] Zhimei Sun*, Jian Zhou, Yuanchun Pan, Zhitang Song, Ho-Kwang Mao, Rajeev Ahuja, Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material, Proceedings of the National Academy of Sciences of the United States of America, 2011,108(26):10410-10414
[8] Zhimei Sun*, Jian Zhou, A Blomqvist, B Johansson, Rajeev Ahuja, Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy, Phys. Rev. Lett.,2009,102(7):075504
[9] Zhimei Sun*, Jian Zhou, Rajeev Ahuja, Unique melting behavior in phase-change materials for reversible data storage, Phys. Rev. Lett., 2007,98(5): 055505, Highlighted by NATURE (Nature 445, 687, 2007)
[10] Zhimei Sun*, Jian Zhou, Rajeev Ahuja, Structure of phase change materials for data storage, Phys. Rev. Lett., 2006,96(5): 055507