教学科研成果
获奖情况:
(1)2020年度国家级人才奖励计划青年学者
(2)2024年北航教师教学基本功比赛二等奖
发明专利:
(1)杨圣雪,高凡,一种二维磁性Fe3O4单晶纳米片的制备方法,2022,CN202111067710.2
代表性论文:
[1] Weiting Xu, Shengxue Yang*, et al. Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors, Nature Commun. 2024, 15, 9469.
[2] Xiaona Sun, Shengxue Yang*, et al. MoxRe(1−x)S2-Based Optoelectronic Synapse for Artificial Neural Visual System Application, Adv. Funct. Mater. 2024, 2411999.
[3] Yujia Chen, Shengxue Yang*, et al. Wrinkled Rhenium Disulfide for Anisotropic Nonvolatile Memory and Multiple Artificial Neuromorphic Synapses, ACS Nano 2024, 18, 30871−30883.
[4] Xiaona Sun, Shengxue Yang*, et al. Controllable Synthesis of 2H-1T′ MoxRe(1-x)S2 Lateral Heterostructures and Their Tunable Optoelectronic Properties, Adv. Mater. 2023, 35, 2304171.
[5] Yujia Chen, Shengxue Yang*, et al. Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS2/Graphene Heterojunction Bubbles, ACS Nano 2022, 16, 16271−16280.
[6] Tianle Zhang, Shengxue Yang*, et al. Tuning the Exchange Bias Effect in 2D van der Waals Ferro-/Antiferromagnetic Fe3GeTe2/CrOCl Heterostructures, Adv. Sci. 2022, 9, 2105483.
[7] Shengxue Yang*, Yujia Chen, et al. Strain engineering of two-dimensional materials: Methods, properties, and applications, InfoMat. 2021, 3, 397.
[8] Shengxue Yang*, Tianle Zhang, et al. van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics, Adv. Sci. 2021, 8, 2002488.
[9] Tianle Zhang, Shengxue Yang*, et al. Magnetism and Optical Anisotropy in van der Waals Antiferromagnetic Insulator CrOCl, ACS Nano 2019, 13, 11353.
[10] Shengxue Yang, Chengbao Jiang*, et al. Highly In-plane Optical and Electrical Anisotropy of Two-Dimensional Germanium Arsenide, Adv. Funct. Mater. 2018, 28, 1707379.